Oxide Semiconductor Device and Surface Treatment Method of Oxide Semiconductor
AssigneeHitachi, Ltd.
InventorHiroyuki UCHIYAMA
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Abstract
Oxygen defects formed at the boundary between the zinc oxide type oxide semiconductor and the gate insulator are terminated by a surface treatment using sulfur or selenium as an oxygen group element or a compound thereof, the oxygen group element scarcely occurring physical property value change. Sulfur or selenium atoms effectively substitute oxygen defects to prevent occurrence of electron supplemental sites by merely applying a gas phase or liquid phase treatment to an oxide semiconductor or gate insulator with no remarkable change on the manufacturing process. As a result, this can attain the suppression of the threshold potential shift and the leak current in the characteristics of a thin film transistor.
Claims18
An oxide semiconductor device comprising:
- a substrate;
- a channel layer disposed above the substrate and comprised of a zinc-containing semiconductor;
- a source-drain electrode layer disposed in contact with both end portions of the channel layer so as to sandwich the channel layer;
- a gate insulator including a first face disposed in contact with one surface of the channel layer and further including a second face opposite to the first face;
- and
- a gate electrode disposed on the second face of the gate insulator, wherein the gate electrode is configured to provide an electric field to the channel layer by way of the gate insulator,
- wherein said one surface of the channel layer is subjected to a surface treatment using at least one of sulfur and selenium so that said at least one of sulfur and selenium is substituted for oxide defects formed in the channel layer comprised of the zinc-containing semiconductor at and adjacent to a boundary where the gate insulator and the channel layer are in contact with each other.
An oxide semiconductor device comprising:
- a substrate;
- a channel layer disposed above the substrate and comprised of a zinc-containing semiconductor;
- a source-drain electrode layer disposed in contact with both end portions of the channel layer so as to sandwich the channel layer;
- a gate insulator including a first face disposed in contact with one surface of the channel layer and further including a second face opposite to the first face;
- and
- a gate electrode disposed on the second face of the gate insulator, wherein the gate electrode is configured to provide an electric field to the channel layer by way of the gate insulator;
- and
- surface treatment means provided at said one surface of said channel layer for substituting at least one of sulfur and selenium for oxide defects formed in the channel layer comprised of the zinc-containing semiconductor at and adjacent to a boundary where the gate insulator and the channel layer are in contact with each other.
An oxide semiconductor device comprising;
- a substrate;
- a channel layer disposed above the substrate and comprised of a zinc-containing semiconductor;
- a source-drain electrode layer disposed in contact with both end portions of the channel layer so as to sandwich the channel layer;
- a gate insulator including a first face disposed in contact with one surface of the channel layer and further including a second face opposite to the first face;
- and
- a gate electrode disposed on the second face of the gate insulator, wherein the gate electrode is configured to provide an electric field to the channel layer by way of the gate insulator;
- and
- wherein at least one of sulfur and selenium is used as a surface treatment at said one surface of the channel layer as a substitution element for oxygen defects which are present formed in the channel layer comprised of the zinc-containing semiconductor between the gate insulator and the channel layer.
Dependencies are inferred from the claim text.