Resistor, display device, and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
To provide a novel resistor. To provide a display device having a novel structure that can improve its reliability. To provide a display device having a novel structure that can reduce electrostatic discharge damages. The resistor includes a semiconductor layer and an insulating layer formed over the semiconductor layer, and the semiconductor layer is an oxide represented by an In-M-Zn oxide that contains at least indium (In), zinc (Zn), and M (M is a metal such as Al, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf) and the insulating layer contains at least hydrogen.
Claims21
A resistor comprising:
- a semiconductor layer;
- and
- an insulating layer over the semiconductor layer,
- wherein the semiconductor layer is an oxide comprising indium, zinc, and a metal selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Hf, and
- wherein a concentration of hydrogen contained in the insulating layer is 1×1022 atoms/cm3 or higher.
A display device comprising:
- a pixel portion;
- a driver circuit portion outside the pixel portion;
- and
- a protection circuit portion electrically connected to one or both of the pixel portion and the driver circuit portion,
- wherein the pixel portion comprises a pixel electrode and a first transistor electrically connected to the pixel electrode,
- wherein the driver circuit portion comprises a second transistor configured to control on state or off state of the first transistor,
- wherein each of the first transistor and the second transistor comprises a first oxide semiconductor layer in a channel formation region,
- wherein the protection circuit portion comprises an insulating layer and a second oxide semiconductor layer formed in the same process where the first oxide semiconductor layer is formed,
- wherein a concentration of hydrogen in the first oxide semiconductor layer is different from a concentration of hydrogen in the second oxide semiconductor layer, and
- wherein the insulating layer comprises hydrogen.
A display device comprising:
- a pixel portion;
- and
- a protection circuit portion electrically connected to the pixel portion,
- wherein the pixel portion comprises a pixel electrode and a first transistor electrically connected to the pixel electrode,
- wherein the first transistor comprises a first oxide semiconductor layer in a channel formation region,
- wherein the protection circuit portion comprises an insulating layer and a second oxide semiconductor layer formed in the same process where the first oxide semiconductor layer is formed,
- wherein the insulating layer is in contact with the second oxide semiconductor layer,
- wherein the insulating layer is not in contact with the first oxide semiconductor layer,
- wherein the first oxide semiconductor layer and the second oxide semiconductor layer are each an oxide comprising indium, zinc, and a metal selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Hf, and
- wherein the insulating layer comprises hydrogen.
Dependencies are inferred from the claim text.