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US 2014/0175426 A1Published application
Thin film transistor
AssigneeHon Hai Precision Industry Co., Ltd.
InventorJIAN-SHIHN TSANG
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Abstract
A thin film transistor includes a substrate, a gate electrode formed on the substrate and a gate insulating layer formed on the substrate and covering the gate electrode. A first ion capturing layer is formed on the gate insulating layer. A channel layer is formed on the ion capturing layer. And, a source electrode and a drain electrode are electrically connected with the channel layer.
Claims20
A thin film transistor, comprising:
- a substrate;
- a gate electrode formed on the substrate;
- a gate insulating layer formed on the substrate and covering the gate electrode;
- a first ion capturing layer formed on the gate insulating layer;
- a channel layer formed on the ion capturing layer;
- and
- a source electrode and a drain electrode electrically connected with the channel layer.
4 more elements
A thin film transistor, comprising:
- a substrate;
- a source electrode and a drain electrode located at two opposite ends of an upper surface of the substrate;
- a channel layer located in a middle portion of the upper surface of the substrate and partly covering the source electrode and the drain electrode;
- an ion capturing layer formed on an upper surface of the channel layer;
- a gate insulating layer formed on an upper surface of the ion capturing layer;
- and
- a gate electrode formed on an upper surface of the gate insulating layer.
4 more elements
Dependencies are inferred from the claim text.