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US 2014/0175425 A1Published application
Thin film transistor
AssigneeHon Hai Precision Industry Co., Ltd.
InventorJIAN-SHIHN TSANG
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Abstract
A thin film transistor includes a substrate and a gate electrode formed on the substrate. A gate insulating layer is formed on the substrate and covers the gate electrode. A channel layer is formed on the gate insulating layer. A GaZnO layer formed on the channel layer. A source electrode and a drain electrode are formed on two opposite ends of the GaZnO layer, respectively.
Claims17
A thin film transistor, comprising:
- a substrate;
- a gate electrode formed on the substrate;
- a gate insulating layer formed on the substrate and covering the gate electrode;
- a channel layer formed on the gate insulating layer;
- a GaZnO layer formed on the channel layer;
- and
- a source electrode and a drain electrode formed on two opposite ends of the GaZnO layer, respectively.
4 more elements
A thin film transistor, comprising:
- a substrate;
- a gate electrode formed on the substrate;
- a gate insulating layer formed on the substrate and covering the gate electrode;
- a channel layer formed on the gate insulating layer, the channel layer being made of InGaZnO material;
- a metallic semiconductor layer formed on the channel layer, the metallic semiconductor layer not comprising In ions;
- and
- a source electrode and a drain electrode formed on two opposite ends of the metallic semiconductor layer.
4 more elements
Dependencies are inferred from the claim text.