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US 2014/0157068 A1Published application
Programming nonvolatile memory based on statistical analysis of charge level distributions of memory cells
AssigneeMarvell World Trade Ltd.
InventorsZining Wu, Xueshi Yang
Life of this patent
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Abstract
A system includes a read module, a statistical data generating module, and a storing module. The read module reads charge levels of nonvolatile memory cells and generates read signals. The statistical data generating module generates statistical data based on the read signals. The storing module stores the statistical data. The read module generates the read signals based on the charge levels of the nonvolatile memory cells and the statistical data.
Claims1
A system comprising:
- a read module that reads charge levels of nonvolatile memory cells and that generates read signals;
- a statistical data generating module that generates statistical data based on the read signals, wherein the statistical data includes a mean and a standard deviation of each charge level distribution of the nonvolatile memory cells;
- a storing module that stores the statistical data;
- and
- a least mean square (LMS) module that generates mean values of the charge levels used to program the nonvolatile memory cells based on (i) differences between the read signals and delayed read signals and (ii) a scaling factor that is based on variations in the charge levels due to cycling of the nonvolatile memory cells, wherein the read module generates the read signals based on the charge levels of the nonvolatile memory cells and the statistical data.
2 more elements
Dependencies are inferred from the claim text.