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US 2014/0156924 A1Published application
Semiconductor memory device with improved operating speed and data storage device including the same
AssigneeSK hynix Inc.
InventorsChun Woo JEON, Hwang HUH
Life of this patent
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Abstract
A semiconductor memory device includes a power block configured to generate an internal voltage based on an external voltage which is applied through a power pad; a circuit block configured to operate according to the internal voltage and drive memory cells; and a CAM (content addressed memory) block configured to operate according to the external voltage and store setting information necessary for driving of the memory cells.
Claims20
A semiconductor memory device comprising:
- a power block configured to generate an internal voltage based on an external voltage;
- a circuit block configured to operate according to the internal voltage and drive memory cells;
- and
- a CAM (content addressed memory) block configured to operate according to the external voltage and store setting information necessary for driving of the memory cells.
1 more element
A data storage device comprising:
- a semiconductor memory device;
- and
- a controller configured to control the semiconductor memory device,
- wherein the semiconductor memory device comprises:
- a power block configured to generate an internal voltage based on an external voltage which is applied through a power pad;
- a circuit block configured to operate according to the internal voltage and drive memory cells;
- and
- a CAM (content addressed memory) block configured to operate according to the external voltage and store setting information necessary for driving of the memory cells.
5 more elements
A semiconductor system comprising:
- a memory device configured to operate in response to a plurality of driving modes;
- and
- a CAM (content addressed memory) block configured to is continuously operate regardless of the plurality of driving modes.
Dependencies are inferred from the claim text.