Memory management method, and memory controller and memory storage apparatus using the same

A memory controller for controlling a rewritable non-volatile memory module having a plurality of memory cells, the memory cells constituting a plurality of physical pages, the physical pages constituting a plurality of physical blocks, each of the memory cells comprising a plurality of storage states, the storage states at least comprising a first storage state and a second storage state, the memory controller comprising:

• a host interface configured to couple to a host system;
• a memory interface configured to couple to the rewritable non-volatile memory module;
• and
• a memory management circuit coupled to the host interface and the memory interface,
• wherein the memory management circuit is configured to record a value of a wearing degree of each of the physical pages and operate the rewritable non-volatile memory module according to the values of the wearing degrees of the physical pages,
• wherein in said operation of recording the value of the wearing degree of each of the physical pages, the memory management circuit programs a first physical page of the physical pages to write data into the first physical page, applies a first detection bias to the first physical page to read data from the first physical page and calculates a first error bit amount in the data read by applying the first detection bias to the first physical page, applies a second detection bias to the first physical page to read data from the first physical page and calculates a second error bit amount in the data read by applying the second detection bias to the first physical page, and estimates the value of the wearing degree of the first physical page according to the first error bit amount and the second number of error bit,
• wherein the first detection bias is higher than the second detection bias, the first detection bias is lower than a verification bias corresponding to the second storage state, and the second detection bias is higher than a verification bias corresponding to the first storage state.

A memory storage apparatus comprising:

• a connector configured to couple to a host system;
• a rewritable non-volatile memory module having a plurality of memory cells, wherein the memory cells constitute a plurality of physical pages, the physical pages constitute a plurality of physical blocks, each of the memory cells comprises a plurality of storage states, the storage states at least comprise a first storage state and a second storage state;
• and
• a memory controller coupled to the connector and the rewritable non-volatile memory module,
• wherein the memory controller is configured to record a value of a wearing degree of each of the physical pages and operate the rewritable non-volatile memory module according to the values of the wearing degrees of the physical pages,
• wherein in said operation of recording the value of the wearing degree of each of the physical pages, the memory controller programs a first physical page of the physical pages to write data into the first physical page, applies a first detection bias to the first physical page to read data from the first physical page and calculates a first error bit amount in the data read by applying the first detection bias to the first physical page, applies a second detection bias to the first physical page to read data from the first physical page and calculates a second error bit amount in the data read by applying the second detection bias to the first physical page, and estimates the value of the wearing degree of the first physical page according to the first error bit amount and the second number of error bit,
• wherein the first detection bias is higher than the second detection bias, the first detection bias is lower than a verification bias corresponding to the second storage state, and the second detection bias is higher than a verification bias corresponding to the first storage state.