Methods of Processing Semiconductor Substrates In Forming Scribe Line Alignment Marks

A method of processing a semiconductor substrate in forming scribe line alignment marks, comprising:

• forming non-circuitry features within scribe line area of a semiconductor substrate, individual of the features in cross-section comprising a photoresist block having a laterally outermost sidewall, individual of the features comprising a spacer received laterally over each of the laterally outermost sidewalls in the cross-section, individual of the spacers having a maximum width which is less than a minimum photolithographic feature dimension used in lithographically patterning the substrate;
• using the photoresist blocks and the spacers of the features as an etch mask while etching into substrate material received between the features;
• and
• after the etching, removing remaining of the photoresist blocks and the spacers from the scribe line area.

A method of processing a semiconductor substrate in forming scribe line alignment marks, comprising:

• forming non-circuitry first features within scribe line area of a semiconductor substrate, the first features in cross-section comprising first photoresist blocks respectively having opposing laterally outermost sidewalls and a spacer received against each laterally outermost sidewall of the first photoresist blocks;
• removing the first photoresist blocks from the substrate;
• after removing the first photoresist blocks, depositing a second photoresist over the spacers;
• and
• patterning the second photoresist to form non-circuitry second features within the scribe line area of the semiconductor substrate, the second features in the cross-section comprising second photoresist blocks having laterally outermost opposing sidewalls, respective ones of the spacers formerly received against one of the laterally outermost sidewalls of the first photoresist blocks being received against respective opposing laterally outermost sidewalls of the second photoresist blocks in the cross-section.