Methods of fabricating semiconductor devices having double patterning technology
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-Hwang Sim, Jinhyun Shin
Life of this patent
Estimating the term…
Abstract
Methods of fabricating semiconductor devices and semiconductor devices fabricated thereby are provided. Two photolithography processes and two spacer processes are performed to provide final patterns that have a pitch that is smaller than a limitation of photolithography process. Furthermore, since initial patterns are formed to have line and pad portions simultaneously by performing a first photolithography process, there is no necessity to perform an additional photolithography process for forming the pad portion.
Claims15
A method of fabricating a semiconductor device, comprising:
- forming an etch-target layer and a first mask layer on a substrate;
- forming a second mask pattern on the first mask layer, wherein the second mask pattern includes a second line portion, a second pad portion, and a second connecting portion and wherein the second connecting portion is positioned between the second line portion and the second pad portion;
- forming a first spacer to cover a sidewall of the second mask pattern;
- removing the second line portion and the second connecting portion;
- etching the first mask layer to form a first mask pattern, wherein the first mask pattern includes a first line portion, a first connecting portion, and a first preliminary pad portion and wherein the first line portion, the first connecting portion and the first preliminary pad portion have shapes substantially corresponding to shapes of portions of the first spacer covering the second line portion, the second connecting portion, and the second pad portion, respectively, in plan view;
- partially removing end portions of the first line portion and the first preliminary pad portion to form a pair of first pad portions spaced apart from each other;
- forming a second spacer to cover a sidewall of the first mask pattern;
- removing the first line portion and the first connecting portion;
- and
- etching the etch-target layer using the first pad portion and the second spacer as an etch mask.
11-15. (canceled)
A method of forming a semiconductor device comprising:
- performing a first photolithography process to form initial patterns;
- and
- performing a second photolithography process to provide final patterns having a pitch smaller than a limitation of the photolithography processes.
Dependencies are inferred from the claim text.