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US 2014/0154883 A1Published application
Tungsten nucleation process to enable low resistivity tungsten feature fill
AssigneeLam Research Corporation
InventorsRaashina Humayun, Sudha Manandhar, Michal Danek
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Abstract
Methods for depositing low resistivity tungsten in features of substrates in semiconductor processing are disclosed herein. Methods involve using a germanium-containing reducing agent during tungsten nucleation layer deposition to achieve thin, low resistivity nucleation layers.
Claims19
A method of filling a feature on a substrate with tungsten, the method comprising:
- prior to depositing a bulk tungsten layer, forming a tungsten nucleation layer by exposing the feature to alternating pulses of a germanium-containing reducing agent and a tungsten-containing precursor.
A method of filling a feature on a substrate with tungsten, the method comprising:
- forming a tungsten nucleation layer, and
- after forming the tungsten nucleation layer and prior to depositing a tungsten bulk layer, treating the tungsten nucleation layer to pulses of a germanium-containing reducing agent.
An apparatus for filling a feature on a substrate, the apparatus comprising:
- a multi-chamber apparatus comprising a chamber, the chamber comprising a substrate support and one or more gas inlets configured to expose the substrate to gases;
- and
- a controller for controlling the operations in the apparatus, comprising machine-readable instructions for:
- exposing the feature to alternating pulses of a germanium-containing reducing agent and a tungsten-containing precursor.
1 more element
Dependencies are inferred from the claim text.