Mechanisms for forming stressor regions in a semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• performing a pre-amorphous implantation (PAI) process to form an amorphized region on a substrate;
• forming a stress film over the substrate;
• forming at least one dislocation in the amorphized region, wherein a pinch off point of the at least one dislocation is spaced from a bottom edge of the amorphized region by a distance ranging from about 10 nanometers (nm) to about 40 nm;
• forming a recess region on the substrate, wherein the recess region overlies at least a portion of the at least on dislocation;
• and
• forming an epitaxial stress-inducing material in the recess region.