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US 2014/0154872 A1Published application
Dislocation engineering using a scanned laser
AssigneeInternational Business Machines Corporation
InventorsChung Woh Lai, Xiao Hu Liu, Anita Madan, Klaus W. Schwarz, J. Campbell Scott
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Abstract
A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.
Claims2
A method for manipulating dislocations from a semiconductor device, comprising:
- directing a light-emitting beam locally onto a surface portion of a semiconductor body that includes active regions of the semiconductor device;
- and
- manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam,
- wherein manipulating the plurality of dislocations comprises directly scanning the plurality of dislocations with the light-emitting beam to manipulate a location of each of the plurality of dislocations on the surface portion of the semiconductor body by adjusting a temperature of the surface portion of the semiconductor body corresponding to the plurality of dislocations and adjusting a scan speed of the laser beam.
1 more element
Dependencies are inferred from the claim text.