Method of Forming a Semiconductor Memory Device
AssigneeSK hynix Inc.
InventorsSung Min Hwang, Hyeon Soo Kim
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Abstract
A semiconductor memory device includes a semiconductor substrate defining active regions partitioned by an isolation region, conductive lines spaced apart from each other and crossing the active regions over the semiconductor substrate, a thin film pattern formed on a top portion of the conductive lines having opening portions exposing part of the conductive lines in a width wider than a width of the conductive lines, an insulating layer filling the opening portions and formed over the thin film pattern, and an air gap formed between the conductive lines below the insulating layer and the thin film pattern.
Claims20
A method of forming a semiconductor memory device, comprising:
- forming conductive lines spaced apart from each other and crossing active regions that are partitioned by an isolation region over a semiconductor substrate that defines the active regions;
- filling a gap-fill layer between the conductive lines;
- etching the gap-fill layer to lower a height of the gap-fill layer lower than a top surface of the conductive lines and to expose upper sidewalls of the conductive lines;
- forming a thin film pattern having opening portions to expose part of the gap-fill layer on a top surface of the gap-fill layer and on a surface of the conductive lines;
- removing remaining portions of the gap-fill layer;
- and
- forming an insulating layer on the thin film pattern to fill the opening portions, thereby forming an air gap between the conductive lines below the insulating layer and the thin film pattern.
A method of forming a semiconductor memory device, comprising:
- forming conductive lines spaced apart from each other and crossing active regions partitioned by an isolation region, over a semiconductor substrate that defines the active regions;
- filling a gap-fill layer between the conductive lines;
- etching the gap-fill layer to lower a height of the gap-fill layer lower than a top surface of the conductive lines and to expose upper sidewalls of the conductive lines;
- forming thin film patterns spaced apart from each other and parallel to the active regions on a top surface of the gap-fill layer and on a surface of the conductive lines to expose the gap-fill layer in a space between the thin film patterns;
- removing remaining portions of the gap-fill layer;
- and
- forming an air gap between the conductive lines below each of the thin film patterns by filling the space between the thin film patterns with an insulating layer.
Dependencies are inferred from the claim text.