Semiconductor Constructions, Memory Arrays, Methods of Forming Semiconductor Constructions and Methods of Forming Memory Arrays

A method of forming a memory array, comprising:

• forming a plurality of spaced-apart electrical nodes supported by a semiconductor substrate;
• forming an arrangement of heater element material strips and intervening material over the nodes, the strips extending along a first direction and across pluralities of the nodes;
• each strip having a horizontal portion directly against the nodes and having a non-horizontal portion extending upwardly from the horizontal portion;
• the intervening material being between the strips;
• a first planarized surface extending across the strips and the intervening material;
• forming phase change material across the first planarized surface;
• forming carbon-containing material over the phase change material;
• patterning the carbon-containing material, phase change material and heater element material strips to form structures having sidewalls that extend along the heater element material, the carbon-containing material and the phase change material;
• the carbon-containing material and phase change material of such structures being configured as lines extending along a second direction that intersects the first direction;
• forming first protective material over and between the structures;
• anisotropically etching the first protective material to pattern the first protective material into protective spacers along the sidewalls of the structures;
• the spacers extending across interfaces of the carbon-containing material and the phase change material, and not extending to a top region of the carbon-containing material;
• forming dielectric material between the structures and over the spacers;
• planarizing the dielectric material to remove the dielectric material from over the structures and form a second planarized surface extending across the dielectric material and the structures;
• forming second protective material across the second planarized surface;
• etching through the second protective material to form trenches extending along the lines and exposing carbon-containing material of the lines;
• and
• forming electrically conductive material within the trenches and electrically coupled with the carbon-containing material.