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US 2014/0154857 A1Published application
Memory Device And Method For Making Same
AssigneeInfineon Technologies AG
InventorArmin TILKE
Life of this patent
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Abstract
Embodiments relate to a method of forming a memory array,comprising: forming a collector layer; forming a plurality of collector regions in the collector layer; forming a plurality of base regions over the collector region; forming a plurality of emitter regions over the base regions; forming a plurality of memory elements over the emitter regions, wherein the collector regions, base regions and emitter regions form heterojunction bipolar transistors.
Claims9
A method of forming a memory array,comprising:
- forming a collector layer;
- forming a plurality of collector regions in said collector layer;
- forming a plurality of base regions over said collector region;
- forming a plurality of emitter regions over said base regions;
- forming a plurality of memory elements over said emitter regions,
- wherein said collector regions, base regions and emitter regions form heterojunction bipolar transistors.
3 more elements
Dependencies are inferred from the claim text.