US 2014/0154837 A1 · METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Abstract

To improve electric characteristics of a semiconductor device including an oxide semiconductor. Alternatively, to improve reliability of a semiconductor device including an oxide semiconductor. In a transistor including a first oxide film, an oxide semiconductor film, a pair of electrodes in contact with the oxide semiconductor film, and a second oxide film in contact with the oxide semiconductor film and the pair of electrodes, oxygen is added to the first oxide film and the second oxide film in contact with the oxide semiconductor film and the pair of electrodes, so that oxygen vacancies are reduced. The oxygen is diffused to the oxide semiconductor film by heat treatment or the like; thus, oxygen vacancies in the oxide semiconductor film are reduced.

Claims19

Dependent claims

A method for manufacturing a semiconductor device comprising the steps of:

forming an oxide film over a substrate;
adding oxygen to the oxide film;
forming an oxide semiconductor film over the oxide film after adding oxygen to the oxide film;
performing heat treatment;
etching part of the oxide film and part of the oxide semiconductor film;
forming a pair of electrodes over the oxide semiconductor film after etching the part of the oxide film and the part of the oxide semiconductor film;
forming a gate insulating film over the oxide semiconductor film and the pair of electrodes;
and
forming a gate electrode over the gate insulating film.

6 more elements

A method for manufacturing a semiconductor device comprising the steps of:

forming a first oxide film over a substrate;
adding oxygen to the first oxide film;
forming an oxide semiconductor film over the first oxide film after adding oxygen to the first oxide film;
etching part of the first oxide film and part of the oxide semiconductor film;
forming a pair of electrodes over the oxide semiconductor film after etching the part of the first oxide film and the part of the oxide semiconductor film;
forming a second oxide film over the oxide semiconductor film and the pair of electrodes;
performing heat treatment after forming the second oxide film;
forming a gate insulating film over the second oxide film;
and
forming a gate electrode over the gate insulating film.

7 more elements

A method for manufacturing a semiconductor device comprising the steps of:

forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming a first oxide film over the gate insulating film;
adding oxygen to the first oxide film;
forming an oxide semiconductor film over the first oxide film after adding oxygen to the first oxide film;
etching part of the first oxide film and part of the oxide semiconductor film;
forming a pair of electrodes over the oxide semiconductor film after etching the part of the first oxide film and the part of the oxide semiconductor film;
forming a second oxide film over the pair of the electrodes and the oxide semiconductor film;
adding oxygen to the second oxide film;
performing heat treatment;
and
forming an insulating film over the second oxide film to which the oxygen is added.

9 more elements

Dependencies are inferred from the claim text.

Method for manufacturing semiconductor device

Life of this patent

Method for manufacturing semiconductor device

Life of this patent

Abstract

Claims19