Manufacturing method for detection apparatus

Abstract

A manufacturing method for a detection apparatus is provided. The method includes depositing a first impurity semiconductor layer and a first intrinsic semiconductor layer in this order on a plurality of first electrodes arranged in an array above a substrate. The method also includes patterning the first intrinsic semiconductor layer and the first impurity semiconductor layer and thereby dividing the first intrinsic semiconductor layer and the first impurity semiconductor layer so as to cover each of the plurality of first electrodes separately. The method further includes depositing a second intrinsic semiconductor layer on the patterned first intrinsic semiconductor layer.

Dependencies are inferred from the claim text.