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US 2014/0154826 A1Published application
Etch stop layers in nitride semiconductors created by polarity inversion
AssigneePalo Alto Research Center Incorporated
InventorsBrent S. Krusor, John E. Northrup
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Abstract
A method of producing a semiconductor device can include receiving a Group III-N wafer as a substrate, initiating a first inversion domain boundary layer to form a thin etch stop layer, terminating the etch stop layer with a second inversion domain boundary layer, and subsequently continuing the active region growth.
Claims20
A method of producing a semiconductor device, comprising:
- receiving a substrate;
- forming a multilayer structure on the substrate, wherein at least one interface between two layers in the multilayer structure comprises a first inversion domain boundary;
- and
- at least substantially removing a first outer layer comprising the substrate and material between the substrate and the inversion domain boundary that is nearest to the substrate.
1 more element
Dependencies are inferred from the claim text.