Method for fabricating vertical light emitting diode (vled) structure using a laser pulse to remove a carrier substrate

A method for fabricating a vertical light-emitting diode (VLED) structure comprising:

• providing a carrier substrate;
• forming a semiconductor structure on the carrier substrate comprising a p-GaN confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-GaN confinement layer configured to emit electromagnetic radiation, and an n-GaN confinement layer in electrical contact with the multiple quantum well (MQW) layer;
• removing the carrier substrate using a laser system having parameters selected to generate a plurality of laser pulses configured to decompose interfacial layers of the n-GaN confinement layer with the carrier substrate, and to expose a nitrogen-terminated surface of the n-GaN confinement layer;
• and
• forming an n-contact on the nitrogen-terminated surface of the n-GaN confinement layer.

A method for fabricating a vertical light-emitting diode (VLED) structure comprising:

• providing a carrier substrate;
• forming a semiconductor structure on the carrier substrate comprising a p-GaN confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-GaN confinement layer configured to emit electromagnetic radiation, and an n-GaN confinement layer in electrical contact with the multiple quantum well (MQW) layer;
• forming a reflective layer on the p-GaN confinement layer;
• forming a conductive substrate on the reflective layer;
• removing the carrier substrate using a laser system having parameters selected to generate a plurality of laser pulses configured to decompose interfacial layers of the n-GaN confinement layer with the carrier substrate, and to expose a nitrogen-terminated surface of the n-GaN confinement layer;
• and
• forming an n-contact on the nitrogen-terminated surface of the n-GaN confinement layer comprising Al.