Low Resistance Area Magnetic Stack
AssigneeSeagate Technology LLC
InventorsVijay Karthik Sankar, Mark William Covington
Life of this patent
Estimating the term…
Abstract
A magnetic element may generally be configured at least with a magnetic stack having a multilayer barrier structure disposed between first and second ferromagnetic layers. The multilayer barrier structure can have a binary compound layer disposed between first and second alloy layers with the binary compound having a metal element and a second element where at least one alloy layer has the metal element and a third element dissimilar from the second element.
Claims20
An apparatus comprising a magnetic stack with a multilayer barrier structure disposed between first and second ferromagnetic layers, the multilayer barrier structure having a binary compound layer disposed between first and second alloy layers, the binary compound comprising a metal element and a second element, at least one alloy layer comprising the metal element and a third element dissimilar from the second element.
A magnetic element comprising:
- a magnetic stack with a multilayer barrier structure disposed between first and second ferromagnetic layers and between first and second pure metal layers, the multilayer barrier structure having a binary compound layer disposed between first and second alloy layers, the binary compound comprising a metal element and a second element, each alloy layer comprising the metal element and a third element dissimilar from the second element.
A method comprising:
- constructing a lower electrode portion of a magnetic stack with at least one ferromagnetic layer;
- forming a multilayer barrier structure atop the lower electrode portion, the multilayer barrier structure having a binary compound layer disposed between first and second alloy layers, the binary compound comprising a metal element and a second element, at least one alloy layer comprising the metal element and a third element dissimilar from the second element;
- and
- depositing a top electrode portion a magnet stack with at least one ferromagnetic layer atop the multilayer barrier structure.
Dependencies are inferred from the claim text.