Film structure and method for producing same

Abstract

A film structure (carbon material-insulating film structure) of the present invention includes a carbon material and an insulating film disposed on the carbon material and composed of fluorine-added magnesium oxide. The amount of added fluorine in the magnesium oxide is 0.0049 atomic percent or more and 0.1508 atomic percent or less. This film structure facilitates the realization of an electronic device, such as a spin device, which uses a carbon material such as graphene. This film structure is formed, for example, by sputtering using a target containing magnesium oxide and magnesium fluoride.

Dependencies are inferred from the claim text.