Method for manufacturing silicon-containing film

A method for manufacturing a silicon-containing film, comprising:

• a first step of loading a substrate into a chamber;
• a second step of depositing a silicon-containing film on a surface of said substrate in said chamber;
• a third step of unloading said substrate deposited with said silicon-containing film out of said chamber;
• a fourth step of dry cleaning said chamber with a fluorine-containing gas;
• a fifth step of supplying a reducing gas into said chamber to reduce fluoride present in said chamber;
• and
• a sixth step of exhausting gas in said chamber until a pressure of said chamber is A (Pa),
• in said fifth step, said reducing gas being supplied into said chamber in such a way that a partial pressure of CF4 gas in said chamber is A×(2.0×10−4) Pa or less at the end of said sixth step.