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US 2014/0154414 A1Published application
Atomic layer deposition apparatus and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Yi CHUANG, Hsing-Jui Lee, Ming-Te Chen
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Abstract
An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions.
Claims20
An atomic layer deposition apparatus, comprising:
- a chamber including a plurality of regions;
- and
- a heating device providing specific temperature ranges for the plurality of regions.
An atomic layer deposition apparatus, comprising:
- a chamber including a plurality of regions having at least a first region and a second region, the first region configured to produce a film having a first thickness, and the second region configured to produce a film having a second thickness different from the first thickness;
- and
- an injector having a gas flow path, the gas flow path including a first hole with a first geometric parameter and a second hole with a second geometric parameter different from the first geometric parameter, the injector being configured to generate a non-uniform gaseous flow in the first region relative the second region.
An atomic layer deposition process, comprising:
- providing a chamber having a plurality of regions;
- and
- injecting at least two depositing materials into respective ones of the plurality of regions.
Dependencies are inferred from the claim text.