Wet activation of ruthenium containing liner/barrier
AssigneeLam Research Corporation
InventorsYezdi Dordi, Dries Dictus
Life of this patent
Estimating the term…
Abstract
Methods and systems are provided for preparing a ruthenium containing liner/barrier for metal deposition, and are useful in the manufacture of integrated circuits. In accordance with one embodiment, a borohydride solution having a pH greater than 12 is mixed with DI water at the place of application to form a pretreatment solution. The pretreatment solution is applied to reduce a ruthenium-containing surface of a substrate. Following reduction of the ruthenium containing surface, copper deposition may be initiated.
Claims23
A wet pretreatment method for preparing a ruthenium surface for metal deposition, comprising:
- receiving a borohydride solution having a pH greater than about 12;
- receiving deionized (DI) water;
- mixing the borohydride solution with the DI water to form a pretreatment solution;
- applying the pretreatment solution to the ruthenium surface.
A wet pretreatment method for preparing a ruthenium surface for metal deposition, comprising:
- applying a stream of DI water onto a ruthenium surface;
- mixing a borohydride solution into the stream of DI water, the borohydride solution having a pH greater than 12 prior to the mixing;
- after a predefined period of time, halting the mixing of the borohydride solution into the stream of DI water.
A system for preparing a ruthenium surface of a wafer, comprising:
- a chamber configured to support the wafer;
- a DI water source;
- a conduit for delivering a DI water stream from the DI water source to the chamber for application onto the ruthenium surface of the wafer;
- a borohydride solution source containing a borohydride solution having a pH greater than 12;
- a mixer for mixing the borohydride solution from the borohydride solution source into the DI water stream.
Dependencies are inferred from the claim text.