Alloy and Sputtering Target Material for Soft-Magnetic Film Layer in Perpendicular Magnetic Recording Medium, and Method for Producing the Same

A method for producing a sputtering target material, comprising the steps of:

• a) mixing a first powder and a second powder to form a mixed powder,
• wherein the first powder comprises:
• one or more of Zr, Hf, Nb, Ta and B in an amount satisfying 3 at %≦(Zr+Hf+Nb+Ta)+B/2≦12 at %;
• Al and Cr:
• 0 to 5 at % in total;
• and
• the balance being Co and Fe in an amount of satisfying 1.00≧Fe/(Fe+Co)≧0.90 (at % ratio) with unavoidable impurities, and
• wherein the second powder comprises:
• one or more of Zr, Hf, Nb, Ta and B having an amount of satisfying 3 at %≦(Zr+Hf+Nb+Ta)+B/2≦12 at %;
• Al and Cr:
• 0 to 5 at % in total;
• and
• the balance being Co and Fe in an amount satisfying 0.00≦Fe/(Fe+Co)≦0.10 (at % ratio) with unavoidable impurities;
• and
• b) consolidating the mixed powder at 800 to 1250° C. and at 100 to 1000 MPa to form the sputtering target material,
• wherein the sputtering target material comprises:
• one or more of Zr, Hf, Nb, Ta and B in an amount satisfying 5 at %≦(Zr+Hf+Nb+Ta)+B/2≦10 at % and having 7 at % or less of B;
• Al and Cr:
• 0 to 5 at % in total;
• and
• the balance being Co and Fe in an amount satisfying 0.20≦Fe/(Fe+Co)≦0.65 (at % ratio) with unavoidable impurities.