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US 2014/0153348 A1Published application
Operation Scheme for Non-Volatile Memory
AssigneeInfineon Technologies AG
InventorsThomas Nirschl, Jan Otterstedt, Alexander Duch
Life of this patent
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Abstract
A method of operating an integrated circuit includes determining at least one characteristic of at least one memory cell and conducting an operation for the at least one memory cell, wherein based on the at least one characteristic determined a disturbance for at least one additional memory cell is adjusted.
Claims35
A method of operating an integrated circuit, the method comprising:
- determining at least one characteristic of at least one memory cell;
- and
- conducting an operation for the at least one memory cell, wherein based on the at least one characteristic determined a disturbance for at least one additional memory cell is adjusted.
An integrated circuit, comprising:
- a non-volatile memory comprising a first memory portion and a second memory portion;
- and
- a controller configured to:
- determine at least one characteristic of the first memory portion;
- and
- conduct an operation for the first memory portion, wherein based on the at least one characteristic determined for the first memory portion a disturbance for the second memory portion is adjusted.
3 more elements
A system for operating an integrated circuit, comprising:
- means for determining at least one characteristic of a first memory portion;
- and
- means for conducting an operation for the first memory portion, wherein based on the at least one characteristic determined a disturbance for a second memory portion is adjusted.
A method for conducting an operation for a first memory portion, the method comprising:
- determining at least one characteristic of the first portion of memory;
- and
- conducting the operation for the first portion of memory, wherein based on the at least one characteristic determined a disturbance for a second portion of memory is adjusted.
Dependencies are inferred from the claim text.