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US 2014/0153319 A1Published application
Semiconductor memory device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorToshihiko Saito
Life of this patent
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Abstract
A semiconductor memory device includes a bit line; two or more word lines; and a memory cell including two or more sub memory cells that each include a transistor and a capacitor. One of a source and a drain of the transistor is connected to the bit line, the other of the source and the drain of the transistor is connected to the capacitor, a gate of the transistor is connected to one of the word lines, and each of the sub memory cells has a different capacitance of the capacitor.
Claims14
A semiconductor memory device comprising:
- a bit line;
- a plurality of word lines;
- and
- a memory cell comprising a plurality of sub memory cells, the sub memory cells each comprising a transistor and a capacitor,
- wherein one of a source and a drain of the transistor is electrically connected to the bit line,
- wherein the other of the source and the drain of the transistor is electrically connected to the capacitor,
- wherein a gate of the transistor is electrically connected to one of the plurality of word lines, and
- wherein capacitances of the capacitors in the plurality of sub memory cells are different from each other.
5 more elements
A semiconductor memory device comprising:
- a bit line;
- a plurality of word lines;
- a memory cell comprising a plurality of sub memory cells, the sub memory cells each comprising a transistor and a capacitor;
- and
- an amplifier,
- wherein one of a source and a drain of the transistor in each of the plurality of sub memory cells is electrically connected to a first terminal of the amplifier,
- wherein the other of the source and the drain of the transistor is electrically connected to the capacitor,
- wherein a gate of the transistor is electrically connected to one of the plurality of word lines, and
- wherein capacitances of the capacitors in the plurality of sub memory cells are different from each other.
6 more elements
Dependencies are inferred from the claim text.