Methods of Reading and Using Memory Cells
AssigneeMicron Technology, Inc.
InventorsBhaskar Srinivasan, Gurtej S. Sandhu
Life of this patent
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Abstract
Some embodiments include methods of reading memory cells. The memory cells have a write operation that occurs only if a voltage of sufficient absolute value is applied for a sufficient duration of time; and the reading is conducted with a pulse that is of too short of a time duration to be sufficient for the write operation. In some embodiments, the pulse utilized for the reading may have an absolute value of voltage that is greater than or equal to the voltage utilized for the write operation. In some embodiments, the memory cells may comprise non-ohmic devices; such as memristors and diodes.
Claims14
A method of reading a memory cell, comprising:
- providing a memory cell having a frequency dependent write operation, the memory cell comprising a memristor comprising titanium oxide;
- and
- reading the memory cell with a single pulse having a frequency that is at least an order of magnitude faster than a maximum frequency of the write operation.
A method of reading a memory cell, comprising:
- providing a memory cell having a frequency dependent write operation, the memory cell comprising a memristor comprising one or both of hafnium oxide and zirconium oxide;
- and
- reading the memory cell with a single pulse having a frequency that is at least an order of magnitude faster than a maximum frequency of the write operation.
A method of reading a memory cell, comprising:
- providing an integrated circuit which includes a memory cell having a write operation that occurs at a write voltage and that comprises a lag between a time that the write voltage is applied and a time that the write operation is completed, the memory cell comprising a memristor comprising one or more of titanium oxide, hafnium oxide and zirconium oxide;
- and
- reading the memory cell with a single pulse that is at least an order of magnitude faster than said lag.
A method of using a memory cell, comprising:
- writing to an integrated circuit memory cell with a first pulse to change the memory cell from one memory state to another, the first pulse being provided for a first duration of time, the memory cell comprising a memristor comprising one or more of titanium oxide, hafnium oxide and zirconium oxide;
- and
- reading the memory cell to ascertain which of the memory states the memory cell is in;
- the reading being conducted with a second pulse having a second duration of time that is at least an order of magnitude less than the first duration of time.
Dependencies are inferred from the claim text.