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US 2014/0153312 A1Published application
Memory cells having ferroelectric materials
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, D.V. Nirmal Ramaswamy
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Abstract
Memory cells having ferroelectric materials and methods of operating and forming the same are described herein. As an example, a memory cell can include a first electrode and a second electrode, and an ion source and a ferroelectric material formed between the first electrode and the second electrode, where the ferroelectric material serves to stabilize storage of ions transitioned from the ion source.
Claims25
A memory cell, comprising:
- a first electrode and a second electrode;
- and
- an ion source and a ferroelectric material formed between the first electrode and the second electrode,
- wherein the ferroelectric material serves to stabilize storage of ions transitioned from the ion source.
1 more element
A memory array, comprising:
- a first number of conductive lines;
- a second number of conductive lines intersecting the first number of conductive lines;
- and
- a memory cell formed between a first electrode and a second electrode at each of a number of intersections of the first number of conductive lines and the second number of conductive lines, wherein the memory cell comprises a material stack including at least one mixed valence oxide material formed in contact with a non-ferroelectric tunnel oxide material formed in contact with a ferroelectric insulating metal oxide material.
1 more element
A method of forming a memory cell, comprising:
- forming a first electrode;
- forming an oxygen source material that is in contact with the first electrode;
- forming a non-ferroelectric tunnel oxide material that is in contact with the oxygen source;
- forming a ferroelectric material that is in contact with the non-ferroelectric tunnel oxide material;
- and
- forming a second electrode that is in contact with the ferroelectric material.
3 more elements
A method of operating a memory cell, comprising:
- applying a voltage across a material stack formed between a first electrode and a second electrode to transition a number of ionic species from a source material to a non-ferroelectric tunnel oxide material positioned in series with a ferroelectric insulating metal oxide material in the material stack;
- and
- wherein the number of ionic species transitioned to the non-ferroelectric tunnel oxide material is stabilized by a dipole of the ferroelectric insulating metal oxide material.
Dependencies are inferred from the claim text.