Simulation method for an optical modulator

A simulation model for an optical modulator comprising an optical phase shifter comprising a semiconductor material structure to be coupled between two sections of an optical waveguide, the semiconductor material structure having a junction in a plane parallel to a longitudinal axis of the optical waveguide, the simulation model comprising:

• a diode model configured to characterize an electrical behavior of the junction such that a change in a global refractive index of the optical phase shifter is expressed, by a coefficient, based upon an amount of charges in the junction, and raised to a power, the coefficient and the power being empirical values based upon the semiconductor material and a wavelength.

A simulation method for an optical modulator comprising an optical phase shifter comprising a semiconductor material structure to be coupled between two sections of an optical waveguide, the semiconductor material structure having a junction, the method comprising:

• characterizing electrical behavior of the junction by at least
• determining an amount of charges in the junction, and
• expressing a change in a global refractive index of the optical phase shifter with a coefficient based upon a power of the amount of charges, wherein the coefficient and the power are based upon at least one of the semiconductor material and a wavelength.

A simulation method for an optical modulator comprising an optical phase shifter comprising a semiconductor material structure to be coupled between two sections of an optical waveguide, the semiconductor material structure having a junction in a plane parallel to a longitudinal axis of the optical waveguide, the method comprising:

• characterizing electrical behavior of the junction by at least
• determining an amount of charges in the junction, and
• expressing a change in a refractive index of the optical phase shifter with a coefficient based upon a power of the amount of charges, wherein the coefficient and the power are based upon the semiconductor material and a wavelength.