Semiconductor device and electronic apparatus using the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHajime KIMURA, Yasuko WATANABE
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHajime KIMURA, Yasuko WATANABE
Estimating the term…
The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present invention provides an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The invention provides an electric circuit having a function capable of setting a potential difference at between the both electrodes of the capacitance element by the use of a constant-current source.
(canceled)
A semiconductor device comprising:
A display device comprising:
Dependencies are inferred from the claim text.