Back to results
US 2014/0151899 A1Published application
Dual-damascene process to fabricate thick wire structure
AssigneeInternational Business Machines Corporation
InventorsDouglas D. COOLBAUGH, Keith E. DOWNES, Peter J. LINDGREN, Anthony K. STAMPER
Life of this patent
Estimating the term…
Abstract
A method and a semiconductor device are provided. The semiconductor device includes a partial via etched in a stacked structure and a trough above the partial via. The method includes performing thick wiring using selective etching while etching the partial via to an etch stop layer.
Claims17
A stacked structure comprising:
- a first etch stop layer on a metal layer;
- a second etch stop layer below the metal layer;
- a first partial via extending to the first etch stop layer on the metal layer;
- a second partial via extending to the second etch stop layer;
- a first wire trough above the first partial via and;
- and
- a second wire trough above the second partial via.
4 more elements
A dual-damascene copper BEOL structure, comprising:
- a first partial height via over at least an underlying metal layer, the first partial height via extending to about a first etch stop layer on the underlying metal layer;
- a second partial height via over a MIM capacitor, the second partial height via extending to about a second etch stop layer on the MIM capacitor;
- a first wire trough above the first partial height via;
- and
- a second wire trough above the second partial height via.
2 more elements
Dependencies are inferred from the claim text.