US 2014/0151893 A1 · SEMICONDUCTOR INTERCONNECT STRUCTURES

Abstract

Techniques are disclosed that enable improved shorting margin between unlanded conductive interconnect features and neighboring conductive features. In some embodiments, an etch may be applied to an insulator layer having one or more conductive features therein, such that the insulator layer is recessed below the top of the conductive features and the edges of the conductive features are rounded or otherwise softened. A conformal etch stop layer may then be deposited over the conductive features and the insulator material. A second insulator layer may be deposited above the conformal etch stop layer, and an interconnect feature may pass through the second insulator layer and the conformal etch stop layer to connect with the rounded portion of one of the conductive features. In some embodiments, the interconnect feature is an unlanded via and the unlanded portion of the via may or may not penetrate through the conformal barrier layer.

Claims23

Dependent claims

A semiconductor device, comprising:

a first insulator structure;
a first conductive feature partially within the first insulator structure, the first conductive feature having a portion at least partially protruding beyond a surface of the first insulator structure;
a second insulator structure having a second conductive feature therein;
a conformal intervening layer between the first and second insulator structures, wherein the first insulator structure, intervening layer, and second insulator structure are arranged in a stack, and wherein the conformal intervening layer conforms to the protruding portion of the conductive feature of the first insulator structure;
and
a conductive interconnect feature connecting the first conductive feature with the second conductive feature, the conductive interconnect feature passing through the conformal intervening layer and partially landing on the first conductive feature, wherein the unlanded portion of the conductive interconnect does not penetrate the conformal intervening layer.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor interconnect structures

Life of this patent

Semiconductor interconnect structures

Life of this patent

Abstract

Claims23