Three dimensional through-silicon via construction

Abstract

Embodiments of the present invention include devices having multiple dies packaged together in the same package. The multiple dies are disposed on an interposer which is then disposed on a package substrate. The interposer includes a semiconductor substrate, such as silicon, having vias extending from a front surface of the interposer to a back surface of the interposer. The interposer may be a passive interposer or an active poser. An active interposer includes the functionality of one or more dies and thus reduces the number of dies disposed on the active interposer.

Dependencies are inferred from the claim text.