Techniques for enhancing dielectric breakdown performance

A method of forming an integrated circuit, the method comprising:

• providing a first dielectric layer having formed therein a plurality of interconnects, wherein the plurality of interconnects includes at least a first interconnect and a second interconnect;
• etching the first dielectric layer to form a plurality of recesses therein, wherein the plurality of recesses includes at least a first recess formed between the first and second interconnects;
• and
• depositing a second dielectric layer over a topology formed by the plurality of recesses and the plurality of interconnects, wherein the second dielectric layer comprises a dielectric material of higher dielectric breakdown field (Ec) than the first dielectric layer.

An integrated circuit comprising:

• a first dielectric layer having formed therein a plurality of copper (Cu) interconnects and a plurality of recesses, wherein each recess of the plurality of recesses is formed between a different pair of adjacent interconnects of the plurality of interconnects;
• and
• a second dielectric layer deposited over a topology formed by the plurality of recesses and the plurality of interconnects, wherein the second dielectric layer:
• comprises a material of higher dielectric breakdown field (Ec) than the first dielectric layer;
• reduces diffusion of the copper (Cu) into the first dielectric layer;
• and
• reduces dielectric breakdown between adjacent interconnects.

An integrated circuit interconnect comprising:

• an insulator structure;
• first and second metal features partially within the insulator structure, the first and second metal features each having a portion at least partially protruding beyond a surface of the insulator structure;
• and
• a continuous, conformal insulation layer on the insulator structure and covering the portions of the first and second metal features at least partially protruding beyond the surface of the insulator structure, such that the conformal insulation layer fully encloses vertices of the protruding portions of the first and second metal features.