Semiconductor device and method for manufacturing a semiconductor device

Abstract

A semiconductor device includes a substrate which has at least one doped contact area and at least one line which is formed on the substrate and which is electrically connected to the at least one contact area, and at least one diffusion barrier, which includes at least one metal applied on a contact surface of the associated contact area, being formed between the at least one line and the at least one associated contact area, the at least one metal forming multiple metal-plated subareas which contact the contact surface of the same contact area and which are separated from one another. Furthermore, a manufacturing method for a semiconductor device is described.

Dependencies are inferred from the claim text.