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US 2014/0151884 A1Published application
Self-forming barrier structure and semiconductor device having the same
AssigneeIndustrial Technology Research Institute
InventorsWen-Hsi Lee, Chia-Yang Wu
Life of this patent
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Abstract
A self-forming barrier structure and a semiconductor device using the same are disclosed. The self-forming barrier structure includes a silicon-containing substrate; a first barrier layer formed on the silicon-containing substrate; and a second barrier layer formed of a copper-containing alloy on the first barrier layer; wherein the copper-containing alloy comprises copper and at least one other metal which diffuses faster than copper and is not inter-miscible with copper.
Claims22
A self-forming barrier structure comprising:
- a silicon-containing substrate;
- a first barrier layer formed on the silicon-containing substrate;
- and
- a second barrier layer formed of a copper-containing alloy on the first barrier layer;
- wherein the copper-containing alloy comprises copper and at least one other metal which diffuses faster than copper and is not inter-miscible with copper.
2 more elements
A semiconductor device having a self-forming barrier, comprising:
- a trenched semiconductor structure;
- a first barrier layer formed on the trenched semiconductor structure;
- and
- a second barrier layer formed of a copper-containing alloy on the first barrier layer;
- wherein the copper-containing alloy comprises copper and at least one other metal which diffuses faster than copper and is not inter-miscible with copper.
2 more elements
Dependencies are inferred from the claim text.