Method and system for binding halide-based contaminants
AssigneeMicron Technology, Inc.
InventorsGaro J. Derderian, Cem Basceri, Donald L. Westmoreland
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Abstract
A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
Claims20
A semiconductor circuit comprising:
- a titanium-based film having a halide-based contaminant content of less than 1% due to adsorption of the halide-based contaminants by a material having a greater affinity for the halide-based contaminants than the titanium-based film.
A method comprising, regenerating a material that has adsorbed halide-based contaminant due to an affinity for the halide-based contaminant that is sufficiently greater than that of a titanium-based film for a semiconductor circuit to limit a halide-based contaminant content of the titanium-based film, wherein regenerating comprises heating a deposition chamber in which the material is disposed until the halide-based contaminant is released.
A system, comprising:
- a deposition chamber;
- a semiconductor circuit disposed within the deposition chamber;
- a material disposed within the deposition chamber;
- a titanium-based film of the semiconductor circuit, wherein the titanium-based film comprises a halide-based contaminants content of less than 1% due to adsorption of the halide-based contaminants by the material, wherein the material has a greater affinity for the halide-based contaminants than the titanium-based film.
Dependencies are inferred from the claim text.