Method for Separating a Layer and a Chip Formed on a Layer
AssigneeInfineon Technologies AG
InventorsManfred Engelhardt, Frank Hoffmann
Life of this patent
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Abstract
A method for separating a layer from a substrate. The method includes providing a plurality of trenches extending from a first main surface of the substrate into the substrate. A heat treatment of the substrate is performed such that edges of the trenches grow together at the first main surface to form a closed layer at the first main surface, wherein lower portions of the trenches form one or more cavities within the substrate. After that the closed layer is separated from the substrate along the one or more cavities.
Claims25
A method for separating a layer from a substrate, comprising:
- providing a plurality of trenches extending from a first main surface of the substrate into the substrate;
- performing a heat treatment of the substrate such that edges of the trenches grow together at the first main surface to form a closed layer at the first main surface, wherein lower portions of the trenches form one or more cavities within the substrate;
- and
- separating the closed layer from the substrate along the one or more cavities.
A method for separating layers from a substrate comprising silicon and/or carbon, comprising:
- providing a plurality of trenches extending from a first main surface of the substrate into the substrate, wherein the trenches are laterally and evenly distributed over an entire area of the substrate, wherein a diameter of each trench is larger than 350 nm and wherein an average pitch between two adjacent trenches is smaller than 10 μm;
- providing hydrogen ambient surrounding the substrate;
- performing a heat treatment of the substrate at a temperature above 1000° C. such that edges of the trenches grow together at the first main surface to form a closed layer at the first main surface, wherein lower portions of the trenches form one or more cavities within the substrate;
- and
- separating the closed layer from the substrate along the one or more cavities,
- wherein the step of performing the heat treatment is performed as long as the one or more cavities form an entire cavity extending in parallel to the first main surface of the substrate,
- wherein the steps of the method are repeated such that a plurality of closed layers are separated from the substrate.
A chip, comprising:
- a layer being thinner than 100 μm;
- a plurality of piles integrated into the layer;
- and
- a chip area formed on the layer and comprising an integrated circuit.
Dependencies are inferred from the claim text.