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US 2014/0151853 A1Published application
Ion Implantation Apparatus, Ion Implantation Method, and Semiconductor Device
AssigneeNational University Corporation Tohoku University
InventorsTadahiro OHMI, Tetsuya GOTO
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Abstract
In the plasma-based ion implantation for accelerating positive ions of a plasma and implanting the positive ions into a substrate to be processed on a holding stage in a processing chamber where the plasma has been excited, ion implantation is achieved in the following manner: an RF power having a frequency of 4 MHz or greater is applied to the holding stage to cause a self-bias voltage to generate on the surface of the substrate. The RF power is applied a plurality of times in the form of pulses.
Claims14
An ion implantation apparatus, comprising:
- a processing chamber which is evacuated and in which a plasma is excited and,
- a holding stage provided in the processing chamber and holding a substrate to be processed,
- wherein an RF power is applied to the holding stage to generate a self-bias voltage on a surface of the substrate so that positive ions in the plasma are accelerated and implanted into the substrate,
- wherein the RF power has a frequency of 4 MHz or more and is applied in the form of pulses so that ion implantation is dividedly carried out a plurality of times.
1 more element
-10. (canceled)
Dependencies are inferred from the claim text.