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US 2014/0151850 A1Published application
Plated structures
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. BASKER, Richard Q. WILLIAMS
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Abstract
A method and structure is directed to eDRAM cells with high-conductance electrodes. The method includes forming upper layers on a semiconductor substrate and forming an opening in the upper layers. The method further includes forming a trench in the semiconductor substrate, aligned with the opening. The method further includes forming a metal plate on all exposed surface in the trench by applying a metallic aqueous solution with an electrical bias to a backside of the semiconductor substrate.
Claims11
A structure, comprising:
- a semiconductor substrate;
- a trench in the semiconductor substrate and in alignment with an opening;
- a conformal metal plate lining exposed surfaces of the trench;
- a dielectric liner on the conformal metal plate;
- a metal inner electrode on the dielectric liner;
- and
- a contact in contact with the metal inner electrode.
4 more elements
Dependencies are inferred from the claim text.