Shielding silicon from external rf interference
AssigneeNXP B. V.
InventorChee Keong Phua
Life of this patent
Estimating the term…
Abstract
Consistent with an example embodiment, there is an integrated circuit device (IC) built on a substrate of a thickness. The IC comprises an active device region of a shape, the active device region having a topside and an underside. Through silicon vias (TSVs) surround the active device region, the TSVs having a depth defined by the substrate thickness. On the underside of and having the shape of the active device region, is an insulating layer. A thin-film conductive shield is on the insulating layer, the conductive shield is in electrical contact with the TSVs.
Claims19
An integrated circuit device (IC) built on a substrate of a thickness, the IC comprising:
- an active device region of a shape, the active device region having a topside and an underside;
- through silicon vias (TSVs) surrounding the active device region, the TSVs having a depth defined by the substrate thickness;
- an insulating layer on the underside of and having the shape of the active device region;
- a thin-film conductive shield on the insulating layer, the conductive shield in electrical contact with the TSVs;
- and
- wherein the TSVs are apportioned into a first group of TSVs and an additional group of TSVs.
(canceled)
An integrated circuit device (IC) built on a substrate of a thickness, the IC comprising:
- an active device region of a shape, the active device region having a topside and an underside;
- through silicon vias (TSVs) surrounding the active device region, the TSVs having a depth defined by the substrate thickness;
- an insulating layer on the underside of and having the shape of the active device region;
- and
- a thin-film conductive shield on the insulating layer, the conductive shield in contact with the TSVs;
- an additional thin-film conductive shield defined on the topside of the active device region, the additional thin-film conductive shield in contact with the TSVs,
- wherein the thin-film conductive shield and the additional thin-film conductive shield are electrically connected to one another.
An integrated circuit device (IC) built on a substrate of a thickness, the IC comprising:
- an active device region of a shape, the active device region having a topside and an underside and contact pads on the topside;
- a first group of through silicon vias (TSVs) surrounding the active device region, the TSVs having a depth defined by the substrate thickness;
- an insulating layer on the underside of and having the shape of the active device region;
- and
- a thin-film conductive layer on the insulating layer, the conductive layer in electrical contact with the TSVs,
- an additional insulating later on the thin-film conductive shield;
- and
- an additional thin-film conductive layer on the additional insulating layer, the additional thin-film conductive shield in contact with an additional group of TSVs;
- wherein the thin-film conductive layer and the additional thin-film conductive layer are configured to, at least one of the following,
- RF shields,
- ground planes,
- power planes,
- one or more inductors,
- one or more capacitors,
- one or more inductor/capacitor (LC) networks,
- resistor structures, and
- wherein the thin-film conductive layer and the additional thin-film conductive layer are coupled to one another and to selected contact pads of the active device.
A method for adding a shield to an underside of an integrated circuit, the method comprising:
- defining the integrated circuit as candidate for an underside shield;
- defining a first group and an additional group of TSVs surrounding integrated circuit die, the integrated circuit die on a wafer substrate;
- applying a thin-film conductive layer and an insulating layer, the thin film conductive layer making contact to the TSVs;
- and
- wherein the thin-film conductive layer is configured as the shield, the shield electrically coupled with selected contacts on the integrated circuit die.
Dependencies are inferred from the claim text.