Integrated circuits separated by through-wafer trench isolation

A method of producing an isolated semiconductor circuit on a semiconductor wafer with through trenches, comprising:

• providing the semiconductor wafer, the semiconductor wafer having a semiconductor circuit;
• depositing a pre-metallic dielectric layer on the semiconductor wafer;
• producing a trench through the pre-metallic dielectric layer and into the semiconductor wafer;
• filling the trench with a dielectric material;
• producing a backend of the semiconductor circuit;
• and
• thinning polishing the wafer so that the trench extends completely through the semiconductor layer.

A semiconductor circuit comprising:

• a first sub-circuit in a first semiconductor portion and a second sub-circuit in a second semiconductor portion;
• a backend that includes an electrical connector between the first and second sub-circuits;
• a lateral trench including an electrically isolating material, separating the semiconductor portions of the first and second sub-circuits,
• wherein the lateral trench extends along a width of the semiconductor portions of the first and second sub-circuits,
• wherein one end of the isolating trench is adjacent the backend, and
• wherein the isolating trench is filled with an electrically isolating material.