Semiconductor device structures including metal oxide structures, and related methods of forming semiconductor device structures

A semiconductor device structure comprising:

• a silicon dioxide material over a substrate;
• and
• an array of evenly spaced polymer structures within trenches in the silicon dioxide material, each polymer structure of the array of evenly spaced polymer structures comprising:
• an upper region comprising at least one of a silicon oxide and a titanium oxide;
• and
• a lower region substantially free of the at least one of the silicon oxide and the titanium oxide and comprising a polymer.

A method of forming a semiconductor device structure, comprising:

• forming a block copolymer material comprising a hydrophilic polymer and a hydrophobic polymer within at least one trench in a material overlying a substrate;
• annealing the block copolymer material to form domains of the hydrophilic polymer within a matrix of the hydrophobic polymer;
• contacting the domains of the hydrophilic polymer with a swelling agent comprising a metal oxide precursor to form metal oxide precursor-impregnated domains of the hydrophilic polymer;
• and
• exposing the metal oxide precursor-impregnated domains of the hydrophilic polymer to an oxidizing agent to form metal oxide structures comprising the hydrophilic polymer and a metal oxide within the matrix of the hydrophobic polymer.