US 2014/0151842 A1 · SEMICONDUCTOR APPARATUS

Abstract

A semiconductor apparatus includes a semiconductor chip formed with cut fuses over one surface thereof; and migration preventing modules preventing occurrence of a phenomenon in which metal ions of the fuses migrate to cut zones of the fuses; each migration preventing module including: a ground electrode formed in the semiconductor chip to face the fuse with a first insulation member interposed therebetween; a floating electrode formed over the fuse with a second insulation member interposed therebetween to face the ground electrode with the fuse interposed therebetween; and a power supply electrode formed over the floating electrode with a third insulation member interposed therebetween.

Claims20

Dependent claims

A semiconductor apparatus comprising:

a semiconductor chip formed with cut fuses;
and
migration preventing modules formed to substantially face the cut fuses, respectively;
wherein the each migration preventing module comprising:
a ground electrode formed in the semiconductor chip to substantially face the fuse with a first insulation member interposed therebetween;
a floating electrode formed over the fuse with a second insulation member interposed therebetween to substantially face the ground electrode with the fuse interposed therebetween;
and
a power supply electrode formed over the floating electrode with a third insulation member interposed therebetween.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor apparatus

Life of this patent

Semiconductor apparatus

Life of this patent

Abstract

Claims20