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AssigneeNorth Carolina State University
InventorsXing Huang, B. Jayant Baliga, Alex Qin Huang
Estimating the term…
Disclosed herein are techniques of manufacturing semiconductor devices having a positive-bevel termination and/or a negative-bevel termination. In a particular example, techniques are disclosed for manufacture of a chip-size SiC device having an orthogonal positive-bevel termination used for the reverse blocking junction. The edge termination may be formed, for example, by cutting across a SiC wafer with a V-shaped dicing tool or blade. The cut may be performed by any suitable dicing tool. The cut may be across a p-n junction for forming positive-bevel termination. Subsequently, a surface of the termination may be etched for removing damage caused by the cutting process.
A method of manufacturing a semiconductor device, the method comprising:
A semiconductor device being formed on a wafer having disposed thereon semiconductor layers forming one of a p-n junction and a Schottky barrier junction, and comprising a substantially orthogonal positive-bevel termination formed by cutting across the junction.
A method of manufacturing a semiconductor device, the method comprising:
The method of claim 41, further comprising etching a surface of the negative-bevel termination for removing damage caused by the dicing tool.
A semiconductor device being formed on a wafer having disposed thereon semiconductor layers forming a p-n junction, and comprising a negative-bevel termination formed by cutting across the p-n junction.
A method of manufacturing a semiconductor device, the method comprising:
A semiconductor device being formed on a wafer having disposed thereon semiconductor layers forming a p-n junction, and comprising an angled positive-bevel termination formed by cutting across the p-n junction.
Dependencies are inferred from the claim text.