US 2014/0151839 A1 · AVALANCHE PHOTODIODE WITH LOW BREAKDOWN VOLTAGE

Abstract

An Si/Ge SACM avalanche photo-diodes (APD) having low breakdown voltage characteristics includes an absorption region and a multiplication region having various layers of particular thicknesses and doping concentrations. An optical waveguide can guide infrared and/or optical signals or energy into the absorption region. The resulting photo-generated carriers are swept into the i-Si layer and/or multiplication region for avalanche multiplication. The APD has a breakdown bias voltage of well less than 12 V and an operating bandwidth of greater than 10 GHz, and is therefore suitable for use in consumer electronic devices, high speed communication networks, and the like.

Claims24

Dependent claims

An avalanche photodiode (APD), comprising:

a substrate;
an n-type doped silicon (n+ Si) layer disposed on the substrate;
an intrinsic silicon (i-Si) layer disposed on a portion of the n+ Si layer;
a p-type doped silicon (p Si) layer disposed on the i-Si layer;
an intrinsic germanium (i-Ge) layer disposed on a portion of the p Si layer;
and
a p-type doped silicon (p+ Ge) layer disposed on the i-Ge layer,
wherein the thickness of the i-Si layer is between about 0.07 to 0.13 micrometers (μm).

5 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/976,379Filed 29 Dec 2011

Published

5 Jun 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10H 20/81
Constructional details: bodies
H10F 30/2255
The potential barrier working in avalanche mode, e.g. avalanche photodiodes: in which the active layers form heterostructures, e.g. SAM structures
H10F 77/14
Semiconductor bodies: shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
H10H
Inorganic light-emitting semiconductor devices having potential barriers

Avalanche photodiode with low breakdown voltage

Life of this patent

Avalanche photodiode with low breakdown voltage

Life of this patent

Abstract

Claims24