Semiconductor device and manufacturing method of the same
AssigneeRenesas Electronics Corporation
InventorKoji IIZUKA
Life of this patent
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Abstract
There are provided a highly reliable semiconductor device capable of suppressing occurrence of cracks as well as securing flatness and a manufacturing method therefor. The semiconductor device includes: a semiconductor substrate; an element region; and a non-element region. The non-element region includes: a top-layer metal wiring in a top layer of metal wirings formed in the non-element region; a flattening film covering an upper surface of the top-layer metal wiring; and a protecting film formed over the flattening film. A removed part where the protecting film is removed is formed in at least part of the non-element region.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate having a main surface;
- an element region where photodetectors are formed in the semiconductor substrate;
- and
- a non-element region formed outside the element region over the main surface,
- the non-element region including:
- a top-layer metal wiring in a top layer of metal wirings formed in the non-element region;
- a flattening film covering an upper surface of the top-layer metal wiring;
- and
- a protecting film formed over the flattening film,
- wherein a removed part is formed where the protecting film is removed in at least part of the non-element region.
A method for manufacturing a semiconductor device, comprising the steps of:
- providing a semiconductor substrate having a main surface;
- forming an element region where photodetectors are formed in the semiconductor substrate and a non-element region outside the element region over the main surface;
- forming a top-layer metal wiring in a top layer of metal wirings formed in the non-element region, a flattening film covering an upper surface of the top-layer metal wiring, and a protecting film formed over the flattening film in the non-element region;
- and
- forming a removed part where the protecting film is removed such that the flattening film remains over a surface of the top-layer metal wiring in the non-element region.
Dependencies are inferred from the claim text.