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US 2014/0151834 A1Published application
MEMS Infrared Sensor Including a Plasmonic Lens
AssigneeRobert Bosch GmbH
InventorsAshwin K. Samarao, Gary O'Brien, Ando Feyh, Fabian Purkl, Gary Yama
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Abstract
A method of fabricating a semiconductor device includes forming an absorber on a substrate, and supporting a cap layer over the substrate to define a cavity between the substrate and the cap layer in which the absorber is located. The method further includes forming a lens layer on the cap layer. The lens layer is spaced apart from the cavity and defines a plurality of grooves and an opening located over the absorber.
Claims20
A semiconductor device comprising:
- a substrate having an upper surface;
- a cap wafer supported by the substrate and including a cap layer spaced apart from the substrate;
- an absorber extending from the upper surface and located between the substrate and the cap layer;
- and
- a lens layer supported by the cap layer, the lens layer defining a plurality of grooves and an opening located over the absorber.
2 more elements
A method of fabricating a semiconductor device, comprising:
- forming an absorber on a substrate;
- supporting a cap layer over the substrate to define a cavity between the substrate and the cap layer in which the absorber is located;
- and
- forming a lens layer on the cap layer, the lens layer being spaced apart from the cavity and defining a plurality of grooves and an opening located over the absorber.
1 more element
Dependencies are inferred from the claim text.