Spin-torque magnetoresistive structures
AssigneeInternational Business Machines Corporation
InventorDaniel Worledge
Life of this patent
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Abstract
Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a first ferromagnetic layer, a first nonmagnetic spacer layer proximate to the first ferromagnetic layer, a second ferromagnetic layer proximate to the first nonmagnetic spacer layer, and a first antiferromagnetic layer proximate to the second ferromagnetic layer. For example, the first ferromagnetic layer may comprise a first pinned ferromagnetic layer, the second ferromagnetic layer may comprise a free ferromagnetic layer, and the first antiferromagnetic layer may comprise a free antiferromagnetic layer.
Claims21
A magnetoresistive structure comprising:
- a first ferromagnetic layer;
- a first nonmagnetic spacer layer proximate to the first ferromagnetic layer;
- a second free ferromagnetic layer proximate to the first nonmagnetic spacer layer;
- a first free antiferromagnetic layer in physical contact with the second free ferromagnetic layer;
- a second nonmagnetic spacer layer in physical contact with the first free antiferromagnetic layer;
- and
- a second pinned antiferromagnetic layer in physical contact with the second nonmagnetic spacer layer.
A magnetoresistive memory device comprising:
- a first ferromagnetic layer;
- a first nonmagnetic spacer layer proximate to the first ferromagnetic layer;
- a second free ferromagnetic layer proximate to the first nonmagnetic spacer;
- a first free antiferromagnetic layer in physical contact with the second free ferromagnetic layer;
- a second nonmagnetic spacer layer in physical contact with the first free antiferromagnetic layer;
- and
- a second pinned antiferromagnetic layer in physical contact with the second nonmagnetic spacer layer;
- wherein the magnetoresistive memory device stores at least two data states corresponding to at least two directions of a magnetic moment.
An integrated circuit comprising:
- a substrate;
- a first ferromagnetic layer;
- a first nonmagnetic spacer layer proximate to the first ferromagnetic layer;
- a second free ferromagnetic layer proximate to the first nonmagnetic spacer layer;
- a first free antiferromagnetic layer in physical contact with the second free ferromagnetic layer;
- a second nonmagnetic spacer layer in physical contact with the first free antiferromagnetic layer;
- and
- a second pinned antiferromagnetic layer in physical contact with the second nonmagnetic spacer layer.
A method for forming a spin-torque structure, the method comprising the steps of:
- forming a first ferromagnetic layer;
- forming a first nonmagnetic spacer layer proximate to the first ferromagnetic layer;
- forming a second free ferromagnetic layer proximate to the first nonmagnetic spacer layer;
- forming a first free antiferromagnetic layer in physical contact with the second free ferromagnetic layer;
- forming a second nonmagnetic spacer layer in physical contact with the first free antiferromagnetic layer;
- and
- forming a second pinned antiferromagnetic layer in physical contact with the second nonmagnetic spacer layer.
Dependencies are inferred from the claim text.